Publications (Selected)

Google Scholar Citation (for details)

• Ievlev, S. KC, R. Vasudevan, Y. Kim, X. Lu, M. Alexe, V. R. Cooper, S. Kalinin, O. Ovchinnikova,“Non-conventional Mechanism of Ferroelectric Fatigue via Cation Migration”, Nat. Comm. (2019).
• A. McGuire, G. Clark, S. KC, W. M. Chance, G. E. Jellison, Jr., V. R. Cooper, X. Xu and B. C. Sales, “Magnetic behavior and spin-lattice coupling in cleavable, van der Waals layered CrCl3 crystals” Phys. Rev. Materials 1, 014001 (2017). (highlighted as editor’s suggestion).
• A. McGuire, V. O. Garlea, S. KC, V. R. Cooper, J. Yan, H. Cao and B. C. Sales, “Antiferromagnetism in the van der Waals layered spin-lozenge semiconductor CrTe3”, Phys. Rev. B 95, 144421 (2017).
• Li, A. A. Puretzky, X. Sang, S. KC, M. Tian, F.Ceballos, M. Mahjouri-Samani, K. Wang, R. R. Unocic, H.Zhao, G. Duscher, V. R. Cooper, C. M. Rouleau, D. B. Geohegan, K. Xiao, “Suppression of Defects and Deep Levels Using Isoelectronic Tungsten Substitution in Monolayer MoSe2”. Adv. Funct. Mater. 27, 1603850(2017). (selected for cover page figure)
• KC, R. C. Longo, R. Addou, R. M. Wallace, K. Cho “Electronic properties of MoS2/MoOx interfaces: Implications in Tunnel Field Effect Transistors and Hole Contacts”. Sci. Rep. 6, 33562 (2016).
• Zhang, KC, Y. Nie, C. Liang, W. G. Vandenberghe, R. C. Longo, Y. Zheng, F. Kong, S. Hong, R. M. Wallace ,and K.Cho “Charge Mediated Reversible Metal-Insulator Transitionin Monolayer MoTe2 and WxMo1−xTe2 Alloy”, ACS Nano 10 (8), 7370 (2016).
• Amani, D.-H.Lien, D.Kiriya, J.Xiao, A.Azcatl, J.Noh, S.R.Madhvapathy, R.Addou, S.KC, M. Dubey, K. Cho, R. M. Wallace, S.-C. Lee, J.-H. He, J. W. Ager III, X. Zhang, E. Yablonovitch, A. Javey, “Near-Unity Photoluminescence Quantum Yield in MoS2”, Science 27, 350(6264)1065 (2015).
• KC, C. Zhang, S. Hong, R. M. Wallace, K. Cho, “Phase stability of transition metal dichalcogenide by competing ligand field stabilization and charge density wave”, 2D Mater. 2(3),035019 (2015).
• KC, R. C. Longo, R. M. Wallace, and K. Cho, “Surface Oxidation, Energetics and Kinetics on MoS2 Monolayer,” J. Appl. Phys. 117, 135301 (2015).
• KC, R. L. Pazos, R. Addou, R. Wallace, and K. Cho, “Impact of intrinsic atomic defects on the electronic structure of MoS2 monolayers”, Nanotechnology 25, 375703 (2014).
• KC, R. C. Longo, K. Xiong, and K. Cho. “Electrode-Electrolyte Interface for Solid State Li-Ion Batteries: Point Defects and Mechanical Strain”, J. Electrochem. Soc. 161 (11), F3104-F3110 (2014).
• KC, H. Dong, R.C. Longo, W.Wang, K.Xiong, R.M.Wallace, and K.Cho,“Electronic properties of InP (001)/HfO2 (001) interface: Band offsets and oxygen dependence”, J. Appl. Phys. 115, 023703 (2014).
• KC, W. Wang, K. Xiong, R. C. Longo, H. Dong, R. M. Wallace, and K. Cho, “First-principles study on InP (001)-(2×4) surface oxidation”, J. Appl. Phys. 113, 103705 (2013).
• KC, K. Xiong, R. C. Longo, and K. Cho, “Interface phenomena between Li anode and lithium phosphate electrolyte for Li-ion battery”, J. Power Sources 244, 136 (2013).

Presentations (Selected Invited talks)

• Santosh KC, Surface and Interface Properties of 2D materials, San José State University, 2019.
• Santosh KC, Surface and Interface Properties of van der Waals materials, Department of Physics and Astronomy, Texas A&M University-Commerce, 2019.
• Santosh KC, Surface, Interface, and Inter-Layer Couplings in van der Waals materials, Department of Physics, University of Hawaii, Manoa, 2018.
• Santosh KC, Surface, Interface, and Inter-Layer Couplings in van der Waals materials, Department of Physics, Pontifical Catholic University of Rio de Janeiro, Brazil, July 11, 2018.
• Santosh KC, Surface, Interface, and Inter-Layer Couplings in van der Waals materials, Instituto de Fısica, Universidade Federal do Rio de Janeiro, Rio de Janeiro, Brazil, July 3, 2018.
• Santosh KC and Valentino R. Cooper, Non-covalent interaction in Materials, TMS Meeting,Phoenix, Arizona (2018).
• Santosh KC, First-principles investigation of surface, interface, and inter-layer couplings of van der Waals materials, Naval Research Laboratory (NRL), Washington, D.C., April, 2017.
• Santosh KC, First-principles investigation of transition metal dichalcogenides (TMDs) surface and TMD-oxides interface properties, E-MRS 2016 Fall Meeting, (Symposium D: Nanomaterials-electronics & photonics), Warsaw, Poland.
• Santosh KC, First-principles Investigation of Transition Metal Dichalcogenides (TMDs) Surface and TMD-oxides Interface Properties, Oak Ridge National Laboratory (ORNL), TN, March, 2015.