Publications

 
 
 
Books/Book Chapters:
 
  • Hiu Yung Wong, Introduction to Quantum Computing: From a Layperson to a Programmer in 30 Steps. Switzerland: Springer International Publishing, 2022. https://doi.org/10.1007/978-3-030-98339-0 . ISBN-10: 3030983382.

  • Chatterjee, B., Shoemaker, D., Wong, H., and Choi, S, "AlGaN/GaN HEMT device physics and electrothermal modeling," Chapter 6 in Thermal Management of Gallium Nitride Electronics, Marko J. Tadjer and Travis J. Anderson, Editors, Woodhead Publishing, 2022.

 
 

Peer-Reviewed Journal Papers (+: Supervised Students)

  • Daniel Gutierrez, Pranay Doshi, Hiu Yung Wong, Dennis Nordlund and Ram P. Gandhiraman, “Printed graphene and its composite with copper for electromagnetic interference shielding applications,” Accepted to Nanotechnology, 2024.
  • Y. Wang, M. Porter, M. Xiao, A. Lu+, N. Yee+, I. Kravchenko, B. Srijanto, K. Cheng, H. Y. Wong, and Y. Zhang, "Implanted Guard Ring Edge Termination With Avalanche Capability for Vertical GaN Devices," in IEEE Transactions on Electron Devices, doi: 10.1109/TED.2023.3321010.
  • Tom Jiao+, Edwin Antunez+, and Hiu Yung Wong, "Study of Cryogenic MOSFET Sub-Threshold Swing Using Ab Initio Calculation," in IEEE Electron Device Letters, vol. 44, no. 10, pp. 1604-1607, Oct. 2023, doi: 10.1109/LED.2023.3310511.

  • A. Zaman+, Hector Morrell+, and Hiu Yung Wong, “A Step-by-Step HHL Algorithm Walkthrough to Enhance Understanding of Critical Quantum Computing Concepts,” in IEEE Access, 2023. 10.1109/ACCESS.2023.3297658.

  • Hiu Yung Wong, “TCAD Simulation Models, Parameters, and Methodologies for beta-Ga2O3 Power Devices,” ECS Journal of Solid State Science and Technology, 12 055002, 2023. DOI 10.1149/2162-8777/accfbe.

  • Pranay Doshi, Hiu Yung Wong, Daniel H. Gutierrez, Arlene Lopez, Dennis Nordlund and Ram Prasad Gandhiraman, "Printing of electromagnetic interference shielding materials," Flexible and Printed Electronics, 2023. DOI 10.1088/2058-8585/acc879
  • Hiu Yung Wong, Prabjot Dhillon+, Kristin Beck, and Yaniv Jacob Rosen, "A Simulation Methodology for Superconducting Qubit Readout Fidelity," Solid-State Electronics, https://doi.org/10.1016/j.sse.2022.108582.
  • Ravi Tiwari, Meng Duan, Mohit Bajaj, Denis Dolgos, Lee Smith, Hiu Yung Wong, and Souvik Mahapatra, "A Physics-based TCAD Framework for NBTI," Solid-State Electronics, https://doi.org/10.1016/j.sse.2022.108573.
  • Albert Lu+, Adam Elwailly+, Yuhao Zhang and Hiu Yung Wong, “Study of Vertical Ga2O3 FinFET Short Circuit Ruggedness using Robust TCAD Simulation,” ECS J. Solid State Sci. Technol, 2022. https://doi.org/10.1149/2162-8777/ac9e73 
  • Albert Lu+, Jordan Marshall+, Yifan Wang, Ming Xiao, Yuhao Zhang, and Hiu Yung Wong, "Vertical GaN Diode BV Maximization through Rapid TCAD Simulation and ML-enabled Surrogate Model," Solid-State Electronics, Volume 198, December 2022, 108468, https://doi.org/10.1016/j.sse.2022.108468.
  • V. Eranki+, N. Yee+ and H. Y. Wong, "Out-of-training-range Synthetic FinFET and Inverter Data Generation using a Modified Generative Adversarial Network," in IEEE Electron Device Letters, 2022, doi: 10.1109/LED.2022.3207784.

  • Tom Jiao+ and Hiu Yung Wong, "Robust Cryogenic Ab-initio Quantum Transport Simulation for LG=10nm Nanowire," Solid-State Electronics, Volume 197, 2022, 108440, doi.org/10.1016/j.sse.2022.108440.

  • H. Y. Wong, "Ab Initio Study of HfO2/Ti Interface VO/Oi Frenkel Pair Formation Barrier and VO Interaction With Filament," in IEEE Transactions on Electron Devices, vol. 69, no. 9, pp. 5130-5137, Sept. 2022, doi: 10.1109/TED.2022.3188227. 

  • P. Quibuyen+, T. Jiao+, and H. Y. Wong, "A Software-Circuit-Device Co-Optimization Framework for Neuromorphic Inference Circuits," in IEEE Access, vol. 10, pp. 41078-41086, 2022, doi: 10.1109/ACCESS.2022.3167709.
  • Prabjot Dhillon+ and Hiu Yung Wong, "A Wide Temperature Range Unified Undoped Bulk Silicon Electron and Hole Mobility Model," in IEEE Transactions on Electron Devices, doi: 10.1109/TED.2022.3152471. (2022)
  • Thomas Lu+, Varada Kanchi+, Kashyap Mehta+, Sagar Oza+, Tin Ho+, and Hiu Yung Wong, "Rapid MOSFET Contact Resistance Extraction from Circuit using SPICE Augmented Machine Learning without Feature Extraction," in IEEE Transactions on Electron Devices, vol. 68, no. 12, pp. 6026-6032, Dec. 2021, doi: 10.1109/TED.2021.3123092.
  • Harsaroop Dhillon+, Kashyap Mehta+, Ming Xiao, Boyan Wang, Yuhao Zhang, and Hiu Yung Wong, "TCAD-Augmented Machine Learning with and without Domain Expertise,"  in IEEE Transactions on Electron Devices, vol. 68, no. 11, pp. 5498-5503, Nov. 2021, doi: 10.1109/TED.2021.3073378.
  • J. Lundh, D. Shoemaker, A. G. Birdwell, J. D. Weil, L. M. De La Cruz, P. B. Shah, K. G. Crawford, T. G. Ivanov, H. Y. Wong, and S. Choi, “Thermal performance of diamond field-effect transistors,” Appl. Phys. Lett. 119, 143502 (2021); https://doi.org/10.1063/5.0061948.
  • Adam Elwailly+, Johan Saltin+, Matthew J. Gadlage, and Hiu Yung Wong, " Radiation Hardness Study of LG = 20nm FinFET and Nanowire SRAM through TCAD Simulation," in IEEE Transactions on Electron Devices, vol. 68, no. 5, pp. 2289-2294, May 2021, doi: 10.1109/TED.2021.3067855.

• K. Mehta+ and Hiu Yung Wong, "Prediction of FinFET Current-Voltage and Capacitance-Voltage Curves Using Machine Learning With Autoencoder," in IEEE Electron Device Letters, vol. 42, no. 2, pp. 136-139, Feb. 2021, doi: 10.1109/LED.2020.3045064.

• Fei Ding, Hiu-Yung Wong and Tsu-Jae King Liu, “Design optimization of Sub-5nm Node Nanosheet Field Effect Transistors to Minimize Self-Heating Effects,” Journal of Vacuum Science and Technology B, B 39, 013201 (2021); https://doi.org/10.1116/6.0000675. (Editor’s Pick)

• Hiu Yung Wong, Ming Xiao, Boyan Wang, Yan Ka Chiu+, Xiaodong Yan, Jiahui Ma, Kohei Sasaki, Han Wang, and Yuhao Zhang, "TCAD-Machine Learning Framework for Device Variation and Operating Temperature Analysis With Experimental Demonstration," in IEEE Journal of the Electron Devices Society, vol. 8, pp. 992-1000, 2020, doi: 10.1109/JEDS.2020.3024669.

• Uma Sharma, Meng Duan, Himanshu Diwakar, Karansingh Thakor, Hiu Yung Wong, Steve Motzny, Denis Dolgos and Souvik Mahapatra, "TCAD Framework for HCD Kinetics in Low VD Devices Spanning Full VG/VD Space," in IEEE Transactions on Electron Devices, doi: 10.1109/TED.2020.3021360.

• Cyril Buttaya, Hiu-Yung Wong, Boyan Wang, Ming Xiao, Christina DiMarino and Yuhao Zhang, "Surge Current Capability of Ultra-Wide-Bandgap Ga2O3Schottky Diodes," Microelectronics Reliability, Volume 114, November 2020, 113743. 10.1016/j.microrel.2020.113743.

• K. Mehta+, S. S. Raju+, M. Xiao, B. Wang, Y. Zhang and H. Y. Wong, "Improvement of TCAD Augmented Machine Learning Using Autoencoder for Semiconductor Variation Identification and Inverse Design," in IEEE Access, vol. 8, pp. 143519-143529, 2020, doi: 10.1109/ACCESS.2020.3014470.

• J. Saltin+, N. C. Dao, P. H. W. Leong and H. Y. Wong, "Energy Filtering Effect at Source Contact on Ultra-Scaled MOSFETs," in IEEE Journal of the Electron Devices Society, vol. 8, pp. 662-667, 2020, doi: 10.1109/JEDS.2020.2981251.

• Hiu Yung Wong and Armand Tenkeu+, “Advanced TCAD Simulation and Calibration of Gallium Oxide Vertical Transistor,” ECS Journal of Solid State Science and Technology 9 (3), 035003, 2020.

• Hiu-Yung Wong, Denis Dolgos, Lee Smith, Rimvydas V. Mickevicius, “Modified Hurkx Band-to-Band-Tunneling Model for Accurate and Robust TCAD Simulations,” Microelectronics Reliability, Volume 104, January 2020, 113552.

• Boyan Wang, Ming Xiao, Xiaodong Yan, Hiu Yung Wong, Jiahui Ma, Kohei Sasaki, Han Wang, and Yuhao Zhang, “High-voltage vertical Ga2O3 power rectifiers operational at high temperatures up to 600 K”, Appl. Phys. Lett. 115, 263503 (2019); https://doi.org/10.1063/1.5132818.

• Ravi Tiwari, Narendra Parihar, Karansingh Thakor, Hiu Yung Wong, Steve Motzny, Munkang Choi, Victor Moroz and Souvik Mahapatra, “A 3-D TCAD Framework for NBTI, Part-I: Implementation Details and FinFET Channel Material Impact, in IEEE Transactions on Electron Devices, vol. 66, no. 5, pp. 2086-2092, May 2019.

• Ravi Tiwari, Narendra Parihar, Karansingh Thakor, Hiu Yung Wong, Steve Motzny, Munkang Choi, Victor Moroz and Souvik Mahapatra, “A 3-D TCAD Framework for NBTI, Part-II: Impact of Mechanical Strain, Quantum Effects and FinFET Dimension Scaling, in IEEE Transactions on Electron Devices, vol. 66, no. 5, pp. 2093-2099, May 2019.

• Hiu Yung Wong, Nelson Braga and R. V. Mickevicius, “Enhancement Mode Recessed Gate and Cascode Gate Junctionless Nanowire with Low Leakage and High Drive Current,” in IEEE Transactions on Electron Devices, vol. 65, no. 9, pp. 4004-4008, Sept. 2018.

• P. Pfäfflia, H.Y. Wong, X. Xu, L. Silvestria, X.W. Lin, T. Yang, R. Tiwari, S. Mahapatra, S. Motzny, V. Moroz and Terry Ma, “TCAD Modeling for Reliability,” Microelectronics Reliability, Volumes 88–90, September 2018, Pages 1083-1089.

• Hiu Yung Wong, Nelson Braga and R. V. Mickevicius, “Prediction of highly scaled hydrogen-terminated diamond MISFET performance based on calibrated TCAD simulation,” Diamond and Related Materials, Volume 80, November 2017, Pages 14-17.

• Hiu Yung Wong, Nelson Braga, R. V. Mickevicius, " Normally-off GaN HFET based on Layout and Stress Engineering ", IEEE Electron Device Letters, 37 (12), 1621-1624.

• Subrat Mishra, Hiu Yung Wong, Ravi Tiwari, Ankush Chaudhary, Rakesh Rao, Victor Moroz and Souvik Mahapatra, “TCAD-based NBTI Predictive Model for Sub-20nm node Device Design Considerations”, IEEE Transactions on Electron Devices, 63 (12), 4624-4631.

• Jin-Woo Han, Hiu-Yung Wong, Nelson Braga, Dong-Il, Moon and Meyya Meyyappan, “Stringer Gate FinFET on Bulk Substrate”, IEEE Transactions on Electron Devices, 63 (9), 3432-3438.

• Victor Moroz, Hiu Yung Wong, Munkang Choi, Nelson Braga, R. V. Mickevicius, Yuhao Zhang, Thomas Palacios, “The Impact of Defects on GaN Device Behavior: Modeling Dislocations, Traps, and Pits”, ECS J. Solid State Sci. Technol. 2016, volume 5, issue 4, P3142-P3148. (INVITED PAPER)

• Yuhao Zhang, Min Sun, Hiu-Yung Wong, Yuxuan Lin, Puneet Srivastava, Christopher Hatem, Mohamed Azize, Daniel Piedra, Lili Yu, Takamichi Sumitomo, Nelson de Almeida Braga, Vidas Mickevicius, and Tomás Palacios, "Origin and Control of Off-State Leakage Current in GaN-on-Si Vertical Diodes ", IEEE Transactions on Electron Devices, Vol. 62, No.7, 2155-2161, 2015.

• Hiu Yung Wong, H. Takeuchi, T-J King, M. Ameen, and A. Agarwal, "Elimination of Poly-Si Gate Depletion for Sub-65nm CMOS Technologies by Excimer Laser Annealing", IEEE Electron Device Letters, Vol. 26, No. 4, pp. 234-236, 2005.

• Neil N. H. Ching, H. Y. Wong, Wen J. Li, Philip H. W. Leong and Zhiyu Wen, "A laser-micromachined multi-modal resonating power transducer for wireless sensing systems'', Sensors and Actuators A: Physical, Vol. 97-98, pp. 685-690, 2002.

• P. H. W. Leong, C. W. Sham, W. C. Wong, H. Y. Wong, W. S. Yuen and M. P. Leong, "A Bitstream Reconfigurable FPGA Implementation of the WSAT algorithm'', IEEE Transactions on VLSI Systems, Vol. 9, No. 1, pp. 197-201, 2001

• W. J. Li, G. M. H. Chan, N. N. H. Ching, P. H. W. Leong and H. Y. Wong, "Dynamical Modelling and Simulation of a Laser-micromachined Vibration-based Micro Power Generator'', International Journal of Nonlinear Sciences and Simulation, Vol. 1, pp. 345-353, 2000.

 

Peer-Reviewed Conference Papers (+: Supervised Students)
 

  • Hideki Takeuchi, Robert J. Stephenson, Bobby Vine, K. Doran Weeks, Nyles Cody, Shuyi Li, Danniel Connelly, Robert J. Mears, Gerd Pfeiffer, Cecile Aulnette, Carole David, and Hiu-Yung Wong, " SSROI (Super-steep Retrograde on Insulator) Substrates for RF Switch and LNA Device Performance Enhancement," 2024 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Accepted.
  • Hiu Yung Wong, Albert Lu+, Prabjot Dhillon+, Kristin M. Beck, and Yaniv Jacob Rosen, “Rapid Simulation Framework for Superconducting Qubit Readout System Inverse Design and Optimization,” Center for Advanced Signal and Image Sciences (CASIS) 27th Annual Workshop, 2023.

  • Thomas Lu+, Albert Lu+, and Hiu Yung Wong, "Device Image-IV Mapping using Variational Autoencoder for Inverse Design and Forward Prediction," 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 2023, pp. 161-164, doi: 10.23919/SISPAD57422.2023.10319583.

  • Hiu Yung Wong, Hideki Takeuchi, and Robert J. Mears, "Cryogenic Electron Mobility and Subthreshold Slope of Oxygen-Inserted (OI) Si Channel nMOSFETs," 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 2023, pp. 229-232, doi: 10.23919/SISPAD57422.2023.10319501.

  • Matthew Eng+ and Hiu Yung Wong, "Automatic TCAD Model Parameter Calibration using Autoencoder," 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 2023, pp. 277-280, doi: 10.23919/SISPAD57422.2023.10319530.

  • N. Yee+, A. Lu+, Y. Wang, M. Porter, Y. Zhang, and H.-Y. Wong, "Rapid Inverse Design of GaN-on-GaN Diode with Guard Ring Termination for BV and (VFQ)−1 Co-Optimization," 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, 2023, pp. 143-146, doi: 10.1109/ISPSD57135.2023.10147511.

  • H. Takeuchi, R. J. Mears, M. Hytha, D. J. Connelly, P. E. Nicollian and H. -Y. Wong, "Remote Control of Doping Profile, Silicon Interface, and Gate Dielectric Reliability via Oxygen Insertion into Silicon Channel," 2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK), 2022, pp. 1-4, doi: 10.1109/IMFEDK56875.2022.9975306.

  • Hiu Yung Wong, “Quantum Computing and Information Specialization in Electrical Engineering Master Degree,” accepted by IEEE Quantum Science and Engineering Education Conference (QSEEC), 2022
  • Albert Lu+, Jordan Marshall+, Yifan Wang, Ming Xiao, Yuhao Zhang, and Hiu Yung Wong, "Vertical GaN Diode BV Maximization through Rapid TCAD Simulation and ML-enabled   Surrogate Model," Accepted to 2022 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2022.
  • Tom Jiao+ and Hiu Yung Wong, "Robust Cryogenic Ab-initio Quantum Transport Simulation for LG=10nm Nanowire," Accepted to 2022 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2022.
  • Hiu Yung Wong, Yaniv Jacob Rosen, Kristin Beck, Prabjot Dhillon+, and Jonathan L. Dubois, "A Simulation Methodology for Superconducting Qubit Readout Fidelity," Accepted to 2022 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2022.
  •  Ravi Tiwari, Meng Duan, Mohit Bajaj, Denis Dolgos, Lee Smith, Hiu Yung Wong, and Souvik Mahapatra, "A Complete TCAD Framework for NBTI," Accepted to 2022 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2022.
  • Anika Zaman+ and Hiu Yung Wong, "Study of Error Propagation and Generation in Harrow-Hassidim-Lloyd (HHL) Quantum Algorithm," Accepted to 2022 IEEE Latin America Electron Devices Conference (LAEDC), 2022.
  • Shubhankar Sharma+, Yi Zheng and Hiu Yung Wong, "Short Circuit Ruggedness of Trench Filled Superjunction Devices," Accepted to 2022 IEEE Latin America Electron Devices Conference (LAEDC), 2022.
  •  P. Quibuyen+, T. Jiao+, and H. Y. Wong, “Effect of ReRAM Neuromorphic Circuit Array Variation and Fault on Inference Accuracy “, accepted to 2022 IEEE 4th International Conference on Artificial Intelligence Circuits and Systems (AICAS)
  • V. Eranki+, T. Lu+, and H. Y. Wong, "Comparison of Manifold Learning Algorithms for Rapid Circuit Defect Extraction in SPICE-Augmented Machine Learning," 2022 IEEE 19th Annual Workshop on Microelectronics and Electron Devices (WMED), 2022, pp. 1-4, doi: 10.1109/WMED55302.2022.9758032.
  • Fanus Arefaine+, Meng Duan, Ravi Tiwari, Lee Smith, Souvik Mahapatra, and Hiu Yung Wong, "Using Long Short-Term Memory (LSTM) Network to Predict Negative-Bias Temperature Instability," 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2021, pp. 60-63, doi: 10.1109/SISPAD54002.2021.9592531.
  • Hector Morrell+ and Hiu Yung Wong, "Study of using Quantum Computer to Solve Poisson Equation in Gate Insulators," 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2021, pp. 69-72, doi: 10.1109/SISPAD54002.2021.9592604.
  • Prabjot Dhillon+, Nguyen Cong Dao, Philip H. W. Leong, and Hiu Yung Wong, "TCAD Modeling of Cryogenic nMOSFET ON-State Current and Subthreshold Slope," 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2021, pp. 255-258, doi: 10.1109/SISPAD54002.2021.9592586.
  • Daniel Connelly, Hiu Yung Wong, Richard Burton, Hideki Takeuchi, Robert Mears, "RFSOI n-MOSFET OI-Layer Ground-Plane Engineering with Quasi-3D Simulations," 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2021, pp. 263-267, doi: 10.1109/SISPAD54002.2021.9592543.
  • A. Raol+, T. Jiao, C. Shashidhara and H. Y. Wong, "Fully-Coupled Simulation of the Temperature Effect on Negative Capacitance Ferroelectric Devices," 2021 IEEE Latin America Electron Devices Conference (LAEDC), 2021, pp. 1-4, doi: 10.1109/LAEDC51812.2021.9437945.
  • A. Shimbori, H. Y. Wong and A. Q. Huang, "Comprehensive Comparison of Fabricated 1.6-kV Punch-Through Design Ni/n-SiC Schottky Barrier Diode with Ar+ Implant Edge Termination and Heterojunction p-NiO/n-SiC Diode," 2021 IEEE Latin America Electron Devices Conference (LAEDC), 2021, pp. 1-4, doi: 10.1109/LAEDC51812.2021.9437747. 

·        Johan Saltin+, Adam Elwailly+, and Hiu Yung Wong, "FinFET and Nanowire SRAM Radiation Hardness Studies using Ab initio-TCAD Simulation Framework," Government Microcircuit Applications & Critical Technology Conference (GOMAC), 2021.

·        Sophia Susan Raju+, Boyan Wang, Kashyap Mehta+, Ming Xiao, Yuhao Zhang, and Hiu Yung Wong, “Application of Noise to Avoid Overfitting in TCAD Augmented Machine Learning,” IEEE 2020 International Conference on Simulation of Semiconductor Processes and Devices, pp. 351-354, doi: 10.23919/SISPAD49475.2020.9241654.

·        Hiu Yung Wong, “Calibrated Si Mobility and Incomplete Ionization Models with Field Dependent Ionization Energy for Cryogenic Simulations,” IEEE 2020 International Conference on Simulation of Semiconductor Processes and Devices, pp193-196, doi: 10.23919/SISPAD49475.2020.9241599.

·        A. Nguyen+, H. Nguyen+, S. Venimadhavan+, A. Venkattraman, D. Parent and H. Y. Wong, "Fully Analog ReRAM Neuromorphic Circuit Optimization using DTCO Simulation Framework," 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 2020, pp. 201-204, doi: 10.23919/SISPAD49475.2020.9241635.

·        Adam Elwailly+, Ming Xiao, Yuhao Zhang, and Hiu Yung Wong, "Design Space of Vertical Ga2O3 Junctionless FinFET and its Enhancement with Gradual Channel Doping," IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia 2020, pp. 41-45.

·        Cyril Buttaya, Hiu-Yung Wong, Boyan Wang, Ming Xiao, Christina DiMarino and Yuhao Zhang, "Surge Current Capability of Ultra-Wide-Bandgap Ga2O3Schottky Diodes," Accepted by The 31st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Athens, 2020.

·        Shuntaro Fujii, Hideki Takeuchi, Soichi Morita, Tatsushi Yagi, Shohei Hamada, Toshiro Sakamoto, Shinji Kawaguchi, Naoki Ishigami, Atsushi Okamoto, Shuji Ikeda, Hiu-Yung Wong, Robert J. Mears and Tsutomu Miyazaki, "Analysis of the Effects of Boron Transient Enhanced Diffusion on Threshold Voltage Mismatch in Steep Retrograde Doping NMOSFETs with Inserted Oxygen Layers," 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore, 2020, pp. 1-4, doi: 10.1109/IPFA49335.2020.9260584 .

·        Hoang Cao+, Thanh Lam+, Hoi Nguyen+, Ayyaswamy Venkattraman, David Parent, and Hiu Yung Wong, " Study of ReRAM Neuromorphic Circuit Inference Accuracy Robustness using DTCO Simulation Framework," Accepted by IEEE Workshop on Microelectronics and Electron Devices, 2020.

·        Atsushi Shimbori, Hiu Yung Wong and Alex Q. Huang, "Fabrication and Analysis of a Novel High Voltage Heterojunction p-NiO/n-Ga2 O3 Diode," 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, 2020, pp. 218-221, doi: 10.1109/ISPSD46842.2020.9170054.

·        Robert J Mears, Hideki Takeuchi, Yi-Ann Chen, Richard Burton, Shuyi Li, Robert J. Stephenson, Marek Hytha, Nyles W. Cody, K. Doran Weeks, Dmitri Choutov, Daniel Connelly and Hiu-Yung Wong, "Applications of Oxygen Inserted Silicon Devices in Power and RF: (invited)," 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Penang, Malaysia, 2020, pp. 1-4, doi: 10.1109/EDTM47692.2020.9117944. (INVITED)

·        Hiu Yung Wong, Johan Saltin+ and Yan Ka Chiu+, “SRAM Radiation Effect Study using DTCO Approach,” 16th International Conference on Reliability and Stress-related Phenomena in Nano and Microelectronics, San Jose, CA, Nov, 2019. (INVITED)

·        Johan Saltin+ and Hiu Yung Wong, “TCAD Simulation of FinFET and Nanosheet Radiation Hardness,” 16th International Conference on Reliability and Stress-related Phenomena in Nano and Microelectronics, San Jose, CA, Nov, 2019. (Poster)

·        Johan Saltin+, Shiyang Tian, Fei Ding and Hiu Yung Wong, "Novel Doping Engineering Techniques for Gallium Oxide MOSFET to Achieve High Drive Current and Breakdown Voltage," IEEE 7th Workshop on Wide Bandgap Power Devices and Applications, Raleigh, NC, 2019, pp261-264.

·        Khoa Huynh+, Johan Saltin+, Jin-Woo Han, Meyya Meyyappan and Hiu Yung Wong, "Study of Layout Dependent Radiation Hardness of FinFET SRAM using Full Domain 3D TCAD Simulation," IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, San Jose, CA, 2019.

·        J. Saltin+, N. C. Dao, P. H. W. Leong, and H. Y. Wong, "Degradation of Sub-Threshold Slope in Ultra-Scaled MOSFETs due to Energy Filtering at Source Contact," IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, San Jose, CA, 2019.

·        K. Huynh+, A. C. Tenkeu+, K.P. Pun and H. Y. Wong, "TCAD-Spice Co-Simulation of Ferroelectric Capacitor as an Electrically Trimmable On-Chip Capacitor in Analog Circuit", IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, San Jose, CA, 2019.

·        Bankapalli Yogeswara Sarat+ and Hiu Yung Wong, “TCAD Augmented Machine Learning for Semiconductor Device Failure Troubleshooting and Reverse Engineering”, IEEE 2019 International Conference on Simulation of Semiconductor Processes and Devices, Udine, Italy, 2019, pp. 21-24.

·        Ravi Tiwari, Narendra Prihar, Karansingh Thakor, Hiu-Yung Wong and Souvik Mahapatra, "TCAD Framework to Estimate the NBTI Degradation in FinFET and GAA NSFET Under Mechanical Strain", IEEE 2019 International Conference on Simulation of Semiconductor Processes and Devices, Udine, Italy, 2019, pp. 9-12.

·        Hiu Yung Wong, Nelson Braga, Jie Liu and R. V. Mickevicius, " Studies of Stress Effects on the Electrical Performance of AlGaN/GaN HEMTs through Ab-Initio Calculation and TCAD Simulation," 13th International Conference on Nitride Semiconductors 2019 (ICNS-13). (Poster)

·        H. Y. Wong, F. Ding, N. Braga, R. V. Mickevicius, “Normally-off Dual-gate Ga2O3 Planar MOSFET and FinFET with High Current and Breakdown Voltage,” International Symposium on Power Semiconductor Devices and ICs 2018, pp. 379-382. (Poster)

·        Hiu Yung Wong, Munkang Choi, Ravi Tiwari and Souvik Mahapatra, “On the NBTI of Junction-less Nanowire and Novel Operation Scheme to Minimize NBTI Degradation in Analog Circuits”, 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 172-175.

·        N. Parihar, R. Tiwari, C. Ndiaye, M. Arabi, S. Mhira, H. Wong, S. Motzny, V. Moroz, V. Huard and S. Mahapatra, "Modeling of Process (Ge, N) Dependence and Mechanical Strain Impact on NBTI in RMG HKMG SiGe FDSOI p-MOSFETs and p-FinFETs", 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 167-171.

·        P. Pfäfflia, H.Y. Wong, X. Xu, L. Silvestria, X.W. Lin, T. Yang, R. Tiwari, S. Mahapatra, S. Motzny, V. Moroz and Terry Ma, “TCAD Modeling for Reliability,” in 29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (INVITED)

·        Pooya Jannaty, Hiu-Yung Wong, Ricardo Borges, Lee Smith, “A physics-based industry-proven TCAD simulator for superconducting electronics,” Applied Superconductivity Conference 2018. (POSTER)

·        Hiu Yung Wong, Nelson Braga and R. V. Mickevicius, “A Physical Model of the Abnormal Behaviour of Hydrogen-Terminated Diamond MESFET,” 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, 2017, pp. 333-336.

·        Hiu Yung Wong, Subrat Mishra, Souvik Mahapatra, Steve Motzny and Victor Moroz, “FinFET NBTI Degradation Reduction and Recovery Enhancement through Hydrogen Incorporation and Self-Heating”, 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, 2017, pp. 101-104.

·        S. Mishra, H. Y. Wong, R. Tiwari1, N. Parihar1, R. Rao, S. Motzny, V. Moroz and S. Mahapatra, “Predictive TCAD for NBTI Stress-Recovery in Various Device Architectures and Channel Materials”, 2017 IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, 2017, pp. 6A-3.1-6A-3.8.

·        Hiu Yung Wong, Nelson Braga, R. V. Mickevicius, “AlGaN/GaN Rake-Gate HFET: A Novel Normally-Off HFET based on Stress and Layout Engineering”, 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nuremberg, 2016, pp. 61-64.

·        Hiu Yung Wong, Oleg Penzin, Nelson Braga, R. V. Mickevicius, “Quantum Correction in AlGaN/GaN Transistor Simulations Using Modified Local Density Approximation (MLDA),” 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, 2016, pp. 239-242.

·        Victor Moroz, Hiu Yung Wong, and Munkang Choi, “Modeling Extended Defects in Semiconductor Devices, “ECS PRiME 2016. ECS Transactions 75 (4), 143-152 (INVITED PAPER)

·        Hiu Yung Wong, Nelson Braga, R. V. Mickevicius and Jie Liu, "Study of the effects of barrier and passivation nitride stresses on AlGaN/GaN HEMT performance using TCAD simulation," Wide Bandgap Power Devices and Applications (WiPDA), 2015 IEEE 3rd Workshop on, Blacksburg, VA, 2015, pp. 24-27.

·        Y. Zhang*, H.-Y. Wong*, M. Sun, S. Joglekar, N. A., R. V. Mickevicius, and T. Palacios, "Design space and origin of off-state leakage in GaN vertical power diodes," 2015 IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA, 2015, pp. 35.1.1-35.1.4.   (*Equal contribution)

·        M. Shur, M. Gaevski, R. Gaska, G. Simin, H. Y. Wong, N. Braga, and R. Mickevicius, “Power Loss Reduction in Perforated-Channel HFET Switches”, ECS Trans. 2015 66(1): 179-183. (INVITED PAPER)

·        H. Y. Wong, N. Braga, R. V. Mickevicius, F. Gao and T. Palacios, "Study of AlGaN/GaN HEMT degradation through TCAD simulations," Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on, Yokohama, 2014, pp. 97-100.

·        R Gaska, M Gaevski, J Deng, H Wong, N Braga, RV Mickevicius, M Shur, III-Nitride Perforated Channel FET for High-Efficiency Power Switches and Amplifiers, International Workshop on Nitride Semiconductor 2014

·        M. Shur, M. Gaevski, J. Deng, R. Gaska, H. Wong, N. Braga, V. Mickevicius, and G. Simin, Superior Frequency Characteristics of Perforated Channel HFET, The Lester Eastman Conference on High Performance Devices, 5 – 7 Aug. 2014, Cornell Univ. p. S4-P4

·        R Gaska, J Yang, D Billingsley, B Khan, G Simin, HY Wong, N Braga, X Hu, J Deng, M Shur, R Mickevicius, “Insulated-Gate Integrated III-Nitride RF Switches”, Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011 IEEE.

·        H. Y. Wong, H. Takeuchi, A. Padilla, T.-J. King, M. Ameen, and A. Agarwal, "Pulsed excimer laser annealing for meeting near-term front end processes gate-stack challenges," presented at the 207th Meeting of the Electrochemical Society, Symposium K1 (Quebec City, Canada), May 2005.

·        H.-Y. Wong, H. Takeuchi, T.-J. King, M. Ameen, and A. Agarwal, "Reduced poly-Si gate depletion effect by pulsed excimer laser annealing," presented at the 205th ECS Meeting, Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II Symposium (San Antonio, TX, USA), May 2004. (INVITED PAPER)

·        H. Takeuchi, H. Y. Wong, D. Ha, and T.-J. King, "Impact of oxygen vacancies on high-k gate dielectric engineering," International Electron Devices Meeting Technical Digest, pp. 829-832, 2004.

·        H. Y. Wong, K. Shin, and M. Chan, "The Gate Misalignment Effects of the Sub-threshold Characteristics of sub-100nm DG-MOSFETs", 2002 IEEE Hong Kong Electron Devices Meeting Proceedings, pp. 91-94, June 22, 2002, Hong Kong

·        Neil N. H. Ching, Hiu Yung Wong, Wen J. Li, and Philip H. W. Leong, "A laser-micromachined vibrational to electrical power transducer for wireless sensing systems", 11th International Conference on Solid-State Sensors and Actuators, (Transducers '01 / Eurosensors XV), Munich, Germany, June 2001.

·        Neil N. H. Ching, Gordon M. H. Chan, Wen J. Li, Hiu Yung Wong, and Philip H. W. Leong, "PCB-integrated Micro-generator Arrays for Wireless Systems", International Symposium on Smart Structures and Microsystems, Oct. 19-21, 2000, Hong Kong.

·        Wen J. Li, Philip H. W. Leong, Terry C. H. Hong, Hiu Yung Wong, and Gordon M. H. Chan, "Infrared Signal Transmission by a Laser-micromachined vibration-induced power generator'', Proceedings of the 43rd IEEE Midwest Symposium on Circuits and Systems, August 8-11, pp. 236-239, 2000

H. Y. Wong, W. S. Yuen, K. H. Lee and P. H. W. Leong, "A Runtime Reconfigurable Implementation of the GSAT Algorithm", the Proceedings of the Ninth International Workshop on Field Programmable Logic and Applications (FPL'99) Glasgow, UK, pp. 526-531, 1999

Patents:
 
10 US patents and 1 pending